st083s series inverter grade thyristors stud version 85a 1 bulletin i25185 rev. b 03/94 www.irf.com features all diffused design center amplifying gate guaranteed high dv/dt guaranteed high di/dt high surge current capability low thermal impedance high speed performance typical applications inverters choppers induction heating all types of force-commutated converters i t(av) 85 a @ t c 85 c i t(rms) 135 a i tsm @ 50hz 2450 a @ 60hz 2560 a i 2 t@ 50hz 30 ka 2 s @ 60hz 27 ka 2 s v drm /v rrm 400 to 1200 v t q range (*) 10 to 30 s t j - 40 to 125 c parameters st083s units major ratings and characteristics (*) t q = 10 to 20s for 400 to 800v devices t q = 15 to 30s for 1000 to 1200v devices case style to-209ac (to-94)
st083s series 2 www.irf.com bulletin i25185 rev. b 03/94 voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. vvma 04 400 500 08 800 900 10 1000 1100 12 1200 1300 electrical specifications voltage ratings frequency units 50hz 210 120 330 270 2540 1930 400hz 200 120 350 210 1190 810 1000hz 150 80 320 190 630 400 a 2500hz 70 25 220 85 250 100 recovery voltage vr 50 50 50 50 50 50 voltage before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ m s case temperature 60 85 60 85 60 85 c equivalent values for rc circuit 22 w / 0.15f 22 w / 0.15f 22 w / 0.15f i tm 180 o el 180 o el 100 m s i tm i tm current carrying capability v i t(av) max. average on-state current 85 a 180 conduction, half sine wave @ case temperature 85 c i t(rms) max. rms on-state current 135 dc @ 77c case temperature i tsm max. peak, one half cycle, 2450 t = 10ms no voltage non-repetitive surge current 2560 a t = 8.3ms reapplied 2060 t = 10ms 100% v rrm 2160 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 30 t = 10ms no voltage initial t j = t j max 27 t = 8.3ms reapplied 21 t = 10ms 100% v rrm 19 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 300 ka 2 ? s t = 0.1 to 10ms, no voltage reapplied parameter st083s units conditions on-state conduction ka 2 s st083s 30
st083s series 3 www.irf.com bulletin i25185 rev. b 03/94 v tm max. peak on-state voltage 2.15 i tm = 300a, t j = t j max, t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25c, i t > 30a i l typical latching current 1000 t j = 25c, v a = 12v, ra = 6 w, i g = 1a parameter st083s units conditions on-state conduction 1.46 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.52 (i > p x i t(av) ), t j = t j max. v 2.32 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 2.34 (i > p x i t(av) ), t j = t j max. m w ma di/dt max. non-repetitive rate of rise t j = t j max, v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load, gate pulse: 10v, 5 w source t j = t j max, i tm = 100a, commutating di/dt = 10a/s v r = 50v, t p = 200s, dv/dt: see table in device code switching parameter st083s units conditions 1000 a/s t d typical delay time 0.80 s dv/dt maximum critical rate of rise of t j = t j max., linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st083s units conditions blocking 500 v/ m s 30 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 40 p g(av) maximum average gate power 5 i gm max. peak positive gate current 5 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st083s units conditions 20 5 vt j = t j max, t p 5ms 200 ma 3v t j = 25c, v a = 12v, ra = 6 w t j = t j max, rated v drm applied (*) t q = 10 to 20s for 400 to 800v devices; t q = 15 to 30s for 1000 to 1200v devices. min max wt j = t j max, f = 50hz, d% = 50 t q max. turn-off time (*) 10 30
st083s series 4 www.irf.com bulletin i25185 rev. b 03/94 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 1/2" 20unf 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) 2 = flag terminals (for cathode and gate terminals) - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection) dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 t q (s) 10 cn dn en fn * hn 12 cm dm em fm * hm 15 cl dl el fl hl 18 cp dp ep fp * hp 20 ck dk ek fk * hk t q (s) 15 cl -- -- -- -- 18 cp dp ep fp * -- 20 ck dk ek fk * hk 25 cj dj ej fj hj 30 -- dh eh fh hh t j max. junction operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case 0.195 dc operation r thcs max. thermal resistance, case to heatsink 0.08 mounting surface, smooth, flat and greased t mounting torque, 10% 15.5 nm (137) (ibf-in) 14 nm (120) (ibf-in) wt approximate weight 130 g case style to-209ac (to-94) see outline table parameter st083s units conditions thermal and mechanical specifications c k/w non lubricated threads lubricated threads ordering information table 5 6 8 9 st 08 3 s 12 p f k 0 34 10 7 device code 12 d r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) 180 0.034 0.025 120 0.041 0.042 90 0.052 0.056 k/w t j = t j max. 60 0.076 0.079 30 0.126 0.127 conduction angle sinusoidal conduction rectangular conduction units conditions * standard part number. all other types available only on request. only for 1000/1200v up to 800v 10
st083s series 5 www.irf.com bulletin i25185 rev. b 03/94 outline table case style to-209ac (to-94) all dimensions in millimeters (inches) fast-on terminals c.s. 0.4 mm 2 10 (0.39) red shrink red cathode red silicon rubber 4.3 (0.17) dia 21 (0.83) 12.5 (0.49) max. 157 (6.18) 170 (6.69) (.0006 s.i.) 8.5 (0.33) dia. 16.5 (0.65) max. max. 70 (2.75) min. ceramic housing 22.5 (0.88) max. dia. 29 (1.14) max. sw 27 c.s. 16mm 2 flexible lead (.025 s.i.) 2.6 (0.10) max. white shrink 2 0 ( 0 . 7 9 ) m i n . 29.5 (1.16) max. 1/2"-20unf-2a 9 . 5 ( 0 . 3 7 ) m i n . white gate 215 (8.46) case style to-208ad (to-83) all dimensions in millimeters (inches) 10 1/2"-20unf-2a 29.5 (1.16) max. ma x. 46 (1.81) 10 7.5 (0.30) 22.5 dia. 16.5 (0.65) 1 2.5 (0.49) 5.2 (0.20) dia. 29 (1.14) (0.39) (0.89) max. 21(0.83) 1.5 (0.06) dia. (0.39) 49 (1.93) max. ceramic housing flag terminals sw 27 2.4 (0.09) amp. 280000-1 ref-250
st083s series 6 www.irf.com bulletin i25185 rev. b 03/94 70 80 90 100 110 120 130 0 20406080100120140 dc 30 60 90 120 180 average on-state current (a) maximum allow able case temperature ( c) conduction period st083s series r (dc) = 0.195 k/w thjc fig. 2 - current ratings characteristics fig. 1 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 80 90 100 110 120 130 0 102030405060708090 maximum allowable case temperature ( c) 30 60 90 120 180 average on-state current (a) conduction angle st083s series r ( dc) = 0.195 k/w thjc 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 0 20 40 60 80 100 120 140 dc 180 120 90 60 30 rms lim it conduction period maximum average on-state power loss (w) average on-state current (a) st083s series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 .3 k/ w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 80 90 180 120 90 60 30 rms limit conduction angle maximum aver age on-state power loss (w) average on-sta te curr en t (a) st083s series t = 125c j
st083s series 7 www.irf.com bulletin i25185 rev. b 03/94 fig. 9 - reverse recovered charge characteristics fig. 10 - reverse recovery current characteristics fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristic fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 1000 1200 1400 1600 1800 2000 2200 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st083s series at any rated load condition and with rated v ap plied followin g surge. rrm 1000 1200 1400 1600 1800 2000 2200 2400 2600 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125 c no voltage reapplied rated v reapplied rrm j st083s ser ies maximum non repetitive surge current 100 1000 10000 11.522.533.544.555.566.5 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st083s series 0. 01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc tran sient thermal impedance z (k/w) st083s ser ies steady state value r = 0.195 k/w (dc operation) thj c 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery current - irr (a) rate of fall of forward current - di/dt (a/ s) st083s series t = 125 c i = 500 a 300 a 200 a j 100 a 50 a tm 20 40 60 80 100 120 140 160 10 20 30 40 50 60 70 80 90 100 st083s series t = 125 c i = 500 a 300 a 200 a j 100 a 50 a rate of fall of on-state current - di/dt (a/s) maximum reverse recovery charge - qrr ( c) tm
st083s series 8 www.irf.com bulletin i25185 rev. b 03/94 fig. 13 - frequency characteristics fig. 11 - frequency characteristics fig. 12 - frequency characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basewidth ( s) peak on-state current (a) 1000 1500 2000 3000 200 500 snubber circuit r = 22 ohm s c = 0. 15 f v = 80% v s s d drm st083s seri es sinusoidal pulse t = 60c c 1e4 tp 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basewidth ( s) 1000 1500 2000 3000 200 500 snubber circuit r = 22 ohms c = 0.15 f v = 80% v s s d drm st083s series sinusoidal pulse t = 85c c tp 1e1 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 1000 1500 2000 3000 200 500 snubber circuit r = 22 ohms c = 0.15 f v = 80% v s s d dr m st083s seri es trapezoidal pulse t = 60c di/dt = 50a/s c pulse basewidth ( s) peak on -stat e cur ren t (a) tp 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basewidth ( s) 1000 1500 2000 200 500 snubber circuit r = 22 ohms c = 0.15 f v = 80% v s s d drm st083s series trap ezoid al p ulse t = 85c di/dt = 50a/s c tp 1e1 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 400 2500 100 1000 1500 2000 3000 200 500 snubber circuit r = 22 ohms c = 0.15 f v = 80% v s s d drm st083s series trapezoida l p ulse t = 60c d i/dt = 100a/s c pulse basewidth ( s) pea k on-state curr en t (a) tp 1e4 50 hz 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basewidth ( s) 1000 1500 2000 200 500 snubber circuit r = 22 ohms c = 0.15 f v = 80% v s s d drm st083s series trapezoidal pulse t = 85c di/dt = 100a/s c tp 1e1
st083s series 9 www.irf.com bulletin i25185 rev. b 03/94 fig. 14 - maximum on-state energy power loss characteristics fig. 15 - gate characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj= -40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recomm ended load lin e for <=30% rated di/dt : 10v, 10ohms rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 20ms (2) pgm = 20w, tp = 10ms (3) pgm = 40w, tp = 5ms (4) pgm = 60w, tp = 3.3ms (3) device: st083s series (4) frequency limited by pg(av) 1e1 1e2 1e3 1e4 1e11e21e31e4 pulse basewidth ( s) 20 joules per pulse 2 1 0.5 0.3 0.2 0.1 st083s series sinusoidal pulse 10 5 peak on-state current (a) 3 tp 1e4 1e1 1e2 1e3 1e4 pulse basewidth ( s) st083s series rectangular pulse di/dt = 50a/ s 20 joules per pulse 7.5 4 2 1 0.5 0.3 0.2 0. 1 tp 1e1
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